Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

被引:20
|
作者
Parrotta, Daniele C. [1 ]
Lubeigt, Walter [1 ]
Kemp, Alan J. [1 ]
Burns, David [1 ]
Dawson, Martin D. [1 ]
Hastie, Jennifer E. [1 ]
机构
[1] Univ Strathclyde, Inst Photon, SUPA, Wolfson Ctr, Glasgow G4 0NW, Lanark, Scotland
基金
英国工程与自然科学研究理事会;
关键词
ALL-SOLID-STATE; INTRACAVITY; GENERATION; POWER;
D O I
10.1364/OL.36.001083
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm. (C) 2011 Optical Society of America
引用
收藏
页码:1083 / 1085
页数:3
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