Vertical integration: a key concept for future flexible and printed electronics

被引:2
|
作者
Han, Heesung [1 ]
Kim, Chang-Hyun [1 ]
Jung, Sungyeop [2 ]
机构
[1] Gachon Univ, Sch Elect Engn, Seongnam 13120, South Korea
[2] Seoul Natl Univ, Adv Inst Convergence Technol, Semicond Devices & Circuits Lab, Suwon 16229, South Korea
来源
FLEXIBLE AND PRINTED ELECTRONICS | 2022年 / 7卷 / 02期
基金
新加坡国家研究基金会;
关键词
vertical integration; organic semiconductors; metal-oxide semiconductors; thin-film transistors; digital logic inverters; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; COMPLEMENTARY INVERTERS; CARBON NANOTUBE; OPPORTUNITIES; FABRICATION; TECHNOLOGY; GRAPHENE; VOLTAGE; DISPLAY;
D O I
10.1088/2058-8585/ac7929
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This review aims at introducing a vertical integration approach as a promising new driver of field-effect transistor circuits and systems, which can overcome limitations of flexible and printed electronics. A large portion of this article is dedicated to systematic categorization and illustration of important and recent demonstrations of vertically integrated circuit building blocks incorporating organic materials, metal-oxide semiconductors, nanotubes, and nanosheets. Key features of each of these materials platforms and their fabrication issues are also broadly discussed. Then, common technical requirements for high-performance devices and circuits are critically evaluated in view of the specific geometrical and theoretical aspects of vertically connected complementary digital logic inverters. Prominent technological opportunities and challenges for the vertical and three-dimensional transistor integration are finally addressed to further motivate active multidisciplinary research on related materials, devices, and systems.
引用
收藏
页数:15
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