Physical limitations in scaling field-effect transistors and technologies beyond CMOS

被引：0

作者：

Willander, M ^{[1
]}

Fu, Y ^{[1
]}

机构：

[1] Gothenburg Univ, Dept Phys, S-41296 Gothenburg, Sweden

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Device analysis has traditionally been based on the semiclassical Boltzmann transport equation. In the past 20 years ultrasmall structures have been extensively studied. In this article we present the quantum effects that have been observed in ultrasmall devices. We also review the current CMOS technologies.

引用

页码：986 / 993

页数：8

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