A Tunable, SiGe X-band Image Reject Mixer

被引：1
|
作者：
Saha, Prabir K. [1 ]
Cressler, John D. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2010年
关键词：
Image reject mixer; SiGe; tunable mixer; self-healing circuits; RF;
D O I：
10.1109/BIPOL.2010.5668039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A SiGe 8-12 GHz image reject mixer with tunable performance is presented. Control voltages and currents allow the mixer performance to be "healed", nullifying effects of process variation or environmental changes. Conversion gain greater than 10 dB and output P1dB greater than 0 dBm were obtained in measurement. An image rejection ratio ( IRR) of greater than 40 dB was obtained after tuning, a 25 dB improvement over pre-tuned results. The mixer was fabricated in a 150 GHz peak f(T) SiGe BiCMOS process and consumes 200 mA of current operating on a 4 V rail.
引用
收藏
页码：196 / 199
页数：4
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