Defects in implanted Hg1-xCdxTe:: Electrical and structural characterization

被引：0
|
作者：
Aguirre, M
Canepa, H
Heredia, E
de Reca, NEW
机构：
[1] CITEFA, CONICET, PRINSO, RA-1603 Buenos Aires, DF, Argentina
[2] Univ Buenos Aires, Fac Ciencias Exactas, Dept Fis, Buenos Aires, DF, Argentina
来源：
DEFECT AND DIFFUSION FORUM | 1998年 / 162卷
关键词：
ion implantation; radiation defects; Hg1-xCdxTe; Hall effect; Rutherford backscattering spectroscopy; channeling;
D O I：
10.4028/www.scientific.net/DDF.162-163.21
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the ion implantation damage on the electrical properties of Hg1-xCdxTe (MCT) has been studied. MCT (110) layers grown at PRINSO by ISOVPE (Isothermal Vapor Phase Epitaxy) method were implanted with Ar++, Au+, Pb+ and Bi+ ions. Hall and RES measurements were employed to evaluate the electrical properties and structural damage respectively.
引用
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页码：21 / 25
页数：5
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