Position-sensitive multi-wavelength photon detectors based on epitaxial InGaAs/InAlAs quantum wells

被引:3
|
作者
Ganbold, T. [1 ,2 ]
Antonelli, M. [3 ]
Cautero, G. [3 ]
Menk, R. H. [3 ]
Cucini, R. [3 ]
Biasiol, G. [1 ]
机构
[1] IOM CNR, Lab TASC, I-34149 Trieste, Italy
[2] Univ Trieste, Grad Sch Nanotechnol, I-34128 Trieste, Italy
[3] Elettra Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
关键词
Molecular beam epitaxy; Semiconducting III-V materials; Heterojunction semiconductor devices; ENERGY;
D O I
10.1016/j.jcrysgro.2015.02.095
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Beam monitoring in synchrotron radiation or free electron laser facilities is extremely important for calibration and diagnostic issues. Here we propose an in-situ detector showing fast response and homogeneity for both diagnostics and calibration purposes. The devices are based on In0.75Ga0.25As/In0.75Al0.25As QWs, which offer several advantages due to their direct, low-energy band gap and high electron mobility at room temperature. A pixelation structure with 4 quadrants was developed on the back surface of the device, in order to lit commercially available readout chips. The QW devices have been tested with collimated monochromatic X-ray beams from synchrotron radiation. A rise in the current noise with positive bias was observed, which could be due to deep traps for hole carriers. Therefore, an optimized negative bias was chosen to minimize dark currents and noise. A decrease in charge collection efficiency was experienced as the beam penetrates into deeper layers, where a dislocation network is present. The prototype samples showed that individual currents obtained from each quadrant allow the position of the beam to be monitored for all the utilized energies. These detectors have a potential to estimate the position of the beam with a precision of about 10 mu m. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:341 / 345
页数:5
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