Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects

被引：0

作者：

Zhang, Xiao-Yu ^{[1
]}

Lei, Hu ^{[2
]}

Du, Lin ^{[3
]}

Ji, Siwei ^{[3
]}

Li, Xiaotong ^{[3
]}

Li, Yang ^{[1
]}

Yang, Lin-An ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian, Peoples R China

[2] Shanghai Inst Space Power Sources, Shanghai 200245, Peoples R China

[3] Shanghai Precis Metrol & Testing Res Inst, Shanghai 201109, Peoples R China

来源：

PROCEEDINGS OF THE 2021 CROSS STRAIT RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSRSWTC) | 2021年

基金：

中国国家自然科学基金;

关键词：

IMPATT diode; GaN; defects; electric field; electron velocity; DEVICES;

D O I：

10.1109/CSRSWTC52801.2021.9631666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Ni/GaN Schottky barrier IMPATT diode with n-type GaN deep level defects is optimized in this paper by adjusting its internal electric field. The optimized IMPATT diode shows the improved RF output power of 1.29 MW/cm(2) with efficiency of 12.4 % at 220 GHz, while the original diode's maximum RF output power is 0.71 MW/cm(2) with efficiency of 4.7 % at 220 GHz under the same defects density of 12.8 x 10(17) cm(-3).

引用

页码：52 / 54

页数：3

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