Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects

被引：0
|
作者：
Zhang, Xiao-Yu [1 ]
Lei, Hu [2 ]
Du, Lin [3 ]
Ji, Siwei [3 ]
Li, Xiaotong [3 ]
Li, Yang [1 ]
Yang, Lin-An [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian, Peoples R China
[2] Shanghai Inst Space Power Sources, Shanghai 200245, Peoples R China
[3] Shanghai Precis Metrol & Testing Res Inst, Shanghai 201109, Peoples R China
来源：
PROCEEDINGS OF THE 2021 CROSS STRAIT RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSRSWTC) | 2021年
基金：
中国国家自然科学基金;
关键词：
IMPATT diode; GaN; defects; electric field; electron velocity; DEVICES;
D O I：
10.1109/CSRSWTC52801.2021.9631666
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Ni/GaN Schottky barrier IMPATT diode with n-type GaN deep level defects is optimized in this paper by adjusting its internal electric field. The optimized IMPATT diode shows the improved RF output power of 1.29 MW/cm(2) with efficiency of 12.4 % at 220 GHz, while the original diode's maximum RF output power is 0.71 MW/cm(2) with efficiency of 4.7 % at 220 GHz under the same defects density of 12.8 x 10(17) cm(-3).
引用
收藏
页码：52 / 54
页数：3
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