Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal

被引：40
|
作者：
Hua, Jiang [1 ]
Kim, H. J. [1 ]
Rooh, Gul [2 ]
Park, H. [1 ]
Kim, Sunghwan [3 ]
Cheon, JongKyu [4 ]
机构：
[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea
[2] Abdul Wali Khan Univ, Dept Phys, Mardan 23200, Pakistan
[3] Cheongju Univ, Dept Radiol Technol, Cheongju 360764, South Korea
[4] Sorabol Coll, Radiat Dept, Gyeongju 780711, South Korea
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 648卷 / 01期
关键词：
BSO; Crystal scintillator; Energy resolution; Czochralski; Luminescence; BISMUTH SILICATE BI4SI3O12;
D O I：
10.1016/j.nima.2011.05.043
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed gamma-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：73 / 76
页数：4
相关论文
共 50 条
  • [41] NEUTRON-DIFFRACTION STUDY OF BI4SI3O12
    SEGAL, DJ
    SANTORO, RP
    NEWNHAM, RE
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE KRISTALLGEOMETRIE KRISTALLPHYSIK KRISTALLCHEMIE, 1966, 123 (01): : 73 - &
  • [42] Shaped single crystal growth and scintillation properties of Bi:Gd3Ga5O12
    Novoselov, A
    Yoshikawa, A
    Nikl, M
    Solovieva, N
    Fukuda, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 537 (1-2): : 247 - 250
  • [43] Bi4Si3O12 thin films for scintillator applications
    J. A. Rincón-López
    D. A. Fernández-Benavides
    A. L. Giraldo-Betancur
    B. Cruz-Muñoz
    H. Riascos
    J. Muñoz-Saldaña
    Applied Physics A, 2016, 122
  • [44] VIBRATIONAL-SPECTRA OF BI4SI3O12 CRYSTALS
    KHOMICH, AV
    KARGIN, YF
    PEROV, PI
    SKORIKOV, VM
    INORGANIC MATERIALS, 1990, 26 (08) : 1456 - 1458
  • [45] Nd : Bi4Ge3O12 crystal growth by Czochralski method
    Bae, IK
    Whang, CM
    METALS AND MATERIALS-KOREA, 1999, 5 (05): : 491 - 495
  • [46] Nd : Bi4Ge3O12 crystal growth by Czochralski method
    Bae I.K.
    Whang C.M.
    Metals and Materials, 1999, 5 (5) : 491 - 495
  • [47] Synthesis and photoluminescence properties of ion-doped Bi4Si3O12 microcrystals
    Xiao, Xuefeng
    Wei, Haicheng
    Xu, Jiayue
    Zhang, Huan
    Zhange, Xuefeng
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (11-12): : 722 - 726
  • [48] REFRACTIVE INDEXES AND ELECTROOPTIC COEFFICIENTS OF EULITITIES BI4GE3O12 AND BI4SI3O12
    BORTFELD, DP
    MEIER, H
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5110 - 5111
  • [49] Optimized Bi4Si3O12 scintillation crystals grown in dynamic atmosphere for future particle physics experiments
    Tkachenko, S.
    Gerasymov, I.
    Kurtsev, D.
    Viahin, O.
    Kofanov, D.
    Grynyov, B.
    Mateychenko, P.
    Bryleva, E.
    Martinazzoli, L.
    Delenne, J.
    Roux, L.
    Cala', R.
    Auffray, E.
    Sidletskiy, O.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2025, 1015
  • [50] ELECTRON-EXCITATION AND LUMINESCENCE IN BI4GE3O12 AND BI4SI3O12 CRYSTALS
    IVANOV, VY
    KRUZHALOV, AV
    PUSTOVAROV, VA
    PETROV, VL
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 261 (1-2): : 150 - 152
12345