Negative charge-pump based antenna switch controller using 0.18 μm SOI CMOS technology

被引：8

作者：

Cho, C. ^{[1
]}

Cha, J. ^{[1
]}

Ahn, M. ^{[1
]}

Kim, J. J. ^{[2
]}

Lee, C. ^{[1
]}

机构：

[1] Samsung Design Ctr, Atlanta, GA 30308 USA

[2] Georgia Inst Technol, Georgia Elect Design Ctr, Sch Elect & Comp Engn, Atlanta, GA 30308 USA

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 06期

关键词：

D O I：

10.1049/el.2010.7555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

antenna switch controller integrated with single-pole-multi-throw RF switches is presented. It is implemented in a 0.18 mm CMOS thin-film silicon-on-insulator (SOI) process. The proposed switch controller generates a negative voltage to enhance the linearity and power-handling capability of CMOS antenna switches, resulting in excellent RF performances. The size of the controller is 0.35 mm(2) and the power consumption is 2 mu A for stand-by mode and 50 mu A for Rx mode.

引用

页码：371 / U31

页数：2

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