Negative charge-pump based antenna switch controller using 0.18 μm SOI CMOS technology

被引：8
|
作者：
Cho, C. [1 ]
Cha, J. [1 ]
Ahn, M. [1 ]
Kim, J. J. [2 ]
Lee, C. [1 ]
机构：
[1] Samsung Design Ctr, Atlanta, GA 30308 USA
[2] Georgia Inst Technol, Georgia Elect Design Ctr, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
来源：
ELECTRONICS LETTERS | 2011年 / 47卷 / 06期
关键词：
D O I：
10.1049/el.2010.7555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
antenna switch controller integrated with single-pole-multi-throw RF switches is presented. It is implemented in a 0.18 mm CMOS thin-film silicon-on-insulator (SOI) process. The proposed switch controller generates a negative voltage to enhance the linearity and power-handling capability of CMOS antenna switches, resulting in excellent RF performances. The size of the controller is 0.35 mm(2) and the power consumption is 2 mu A for stand-by mode and 50 mu A for Rx mode.
引用
收藏
页码：371 / U31
页数：2
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