ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

被引：14

作者：

Golmar, F. ^{[2
]}

Villafuerte, M. ^{[1
]}

Mudarra Navarro, A. ^{[3
]}

Rodriguez Torres, C. E. ^{[3
]}

Barzola-Quiquia, J. ^{[4
]}

Esquinazi, P. ^{[4
]}

Heluani, S. P. ^{[1
]}

机构：

[1] Univ Nacl Tucuman, Lab Fis Solido, Dept Fis, Fac Ciencias Exactas & Tecnol,CONICET, San Miguel De Tucuman, Argentina

[2] Univ Buenos Aires, Fac Ingn, Dept Fis, Lab Ablac Laser, Buenos Aires, DF, Argentina

[3] Univ Nacl La Plata, Dept Fis IFLP, Fac Ciencias Exactas, La Plata, Buenos Aires, Argentina

[4] Univ Leipzig, Div Superconduct & Magnetism, Inst Expt Phys 2, Leipzig, Germany

来源：

JOURNAL OF MATERIALS SCIENCE | 2010年 / 45卷 / 22期

关键词：

FERROMAGNETISM; EXCHANGE;

D O I：

10.1007/s10853-010-4710-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.

引用

页码：6174 / 6178

页数：5

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