Influence of Cr+ ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi2/Si(111) heterostructures

The effect of pulsed ion-beam annealing on the surface morphology, structure, and composition of single-crystal Si(111) wafers implanted by chromium ions with a dose varying from 6 x 10(15) to 6 x 10(16) cm(-2) and on subsequent growth of silicon is investigated for the first time. It is found that pulsed ion-beam annealing causes chromium atom redistribution in the surface layer of the silicon and precipitation of the polycrystalline chromium disilicide (CrSi2) phase. It is shown that the ultrahigh-vacuum cleaning of the silicon wafers at 850A degrees C upon implantation and pulsed ion-beam annealing provides an atomically clean surface with a developed relief. The growth of silicon by molecular beam epitaxy generates oriented 3D silicon islands, which coalesce at a layer thickness of 100 nm and an implantation dose of 10(16) cm(-2). At higher implantation doses, the silicon layer grows polycrystalline. As follows from Raman scattering data and optical reflectance spectroscopy data, semiconducting CrSi2 precipitates arise inside the silicon substrate, which diffuse toward its surface during growth.