FORMATION OF CRSI AND CRSI2 UPON ANNEALING OF CR OVERLAYERS ON SI(111)

被引：32
|
作者：
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.35.5880
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5880 / 5883
页数：4
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