2D MATERIALS Silicene transistors

被引：96
|
作者：
Le Lay, Guy [1 ]
机构：
[1] Lab Phys Interact Ion & Mol, F-13397 Marseille, France
来源：
NATURE NANOTECHNOLOGY | 2015年 / 10卷 / 03期
关键词：
D O I：
10.1038/nnano.2015.10
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Artificially synthesized silicene — an atomically thin layer of silicon — is set to rival natural layered materials in the development of field-effect transistors.
引用
收藏
页码：202 / 203
页数：2
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