Microstructure of Ti3SiC2-based ceramics

被引:40
|
作者
Morgiel, J [1 ]
Lis, J [1 ]
Pampuch, R [1 ]
机构
[1] ACAD MIN & MET,DEPT ADV CERAM,PL-30059 KRAKOW,POLAND
关键词
Ti-Si-C ceramics; Ti3SiC2; TiC; SiC; TiSi2 intermetallic self-propagating high-temperature synthesis;
D O I
10.1016/0167-577X(95)00259-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Ti3SiC2-based ceramic produced by self-propagating high-temperature synthesis (SHS) has been investigated by means of analytical electron microscopy (AEM). The observations have proved that the elongated slabs with rounded corners of well fused Ti3SiC2 grains form a matrix within which some rounded TiC and less frequent angular SiC inclusions are present. A TiSi2 phase filling up a remaining free space between carbide grains, has been also detected. The Ti3SiC2 grains are characterised by a high density of dislocations, while the TiC ones contain mostly stacking faults. Cracks forming in the material are situated predominantly at the Ti3SiC2/TiC interface.
引用
收藏
页码:85 / 89
页数:5
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