Effects of irradiation conditions on the lateral grain growth during laser crystallization of amorphous silicon films on borosilicate glass substrates

被引：2
|
作者：
Kim, Pilkyu [1 ]
Moon, Seung-Jae [2 ]
Jeong, Sungho [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mechatron, Kwangju 500712, South Korea
[2] Hanyang Univ, Sch Mech Engn, Seoul 133791, South Korea
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 104卷 / 03期
关键词：
SOLID-PHASE CRYSTALLIZATION; THIN-FILMS;
D O I：
10.1007/s00339-011-6425-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of preheating laser power and pulse laser energy on the size and crystallinity of laterally grown grains by dual-laser crystallization of amorphous silicon (a-Si) films on borosilicate glass substrates were investigated. Plasma-enhanced chemical vapor deposition was adopted for the deposition of the a-Si films in order to reduce the process temperature and thus the diffusion of metal impurities from the glass substrate to the deposited a-Si films. It was found that the preheating laser power is critical in enhancing grain size, whereas the pulse laser energy is closely related to crystal quality. It is demonstrated that by properly adjusting the process conditions, laterally grown grains of 50-mu m size could be obtained.
引用
收藏
页码：851 / 855
页数：5
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