Energy filtered scanning electron microscopy: applications to dopant contrast

被引：3

作者：

Rodenburg, C. ^{[1
]}

Jepson, M. A. E. ^{[1
]}

Inkson, B. J. ^{[1
]}

Bosch, E. ^{[2
]}

Chee, A. K. W. ^{[3
]}

Humphreys, C. J. ^{[3
]}

机构：

[1] Univ Sheffield, Dept Mat Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England

[2] FEI Electron Opt, NL-5600 JA Eindhoven, Netherlands

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1088/1742-6596/209/1/012053

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In the past we have demonstrated that the use of an energy filtered scanning electron microscope (SEM) can enhance SEM dopant contrast Here we have concentrated on a technique based on energy filtering in the SEM that allows the delineation of p-n Junctions

引用

页数：4

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