Conductive Atomic Force Microscope Nanopatterning of Epitaxial Graphene on SiC(0001) in Ambient Conditions

被引:34
|
作者
Alaboson, Justice M. P. [1 ,2 ]
Wang, Qing Hua [1 ]
Kellar, Joshua A. [1 ]
Park, Joohee [1 ]
Elam, Jeffrey W. [3 ]
Pellin, Michael J. [2 ]
Hersam, Mark C. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Div Energy Syst, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
SCANNED PROBE OXIDATION; HYDROGEN-PASSIVATED SILICON; FIELD-INDUCED OXIDATION; INDUCED LOCAL OXIDATION; INERT ORGANIC-SOLVENTS; GRAPHITE OXIDE; SPACE-CHARGE; KINETICS; MECHANISM; MODEL;
D O I
10.1002/adma.201100367
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Conductive atomic force microscope (cAFM) nanopatterning is demonstrated on epitaxial graphene on SiC (0001) under ambient conditions. Nanopatterning kinetics and chemistry suggest that ambient cAFM nanopatterning induces local oxidization with the surface, interface, and bulk layers of epitaxial graphene on SiC (0001) playing distinct roles in the depth profile of the final nanopatterned structure.
引用
收藏
页码:2181 / +
页数:5
相关论文
共 50 条
  • [31] Cellular Interactions on Epitaxial Graphene on SiC (0001) Substrates
    Oliveros, A.
    Coletti, C.
    Frewin, C.
    Locke, C.
    Starke, U.
    Saddow, S. E.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 831 - +
  • [32] Electronic structure of epitaxial graphene nanoribbons on SiC(0001)
    Deretzis, I.
    La Magna, A.
    APPLIED PHYSICS LETTERS, 2009, 95 (06)
  • [33] The correlation of epitaxial graphene properties and morphology of SiC (0001)
    Guo, Y.
    Guo, L. W.
    Huang, J.
    Yang, R.
    Jia, Y. P.
    Lin, J. J.
    Lu, W.
    Li, Z. L.
    Chen, X. L.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (04)
  • [34] Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
    Luxmi
    Nie, Shu
    Fisher, P. J.
    Feenstra, R. M.
    Gu, Gong
    Sun, Yugang
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (06) : 718 - 724
  • [35] Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)
    Shu Luxmi
    P.J. Nie
    R.M. Fisher
    Gong Feenstra
    Yugang Gu
    Journal of Electronic Materials, 2009, 38 : 718 - 724
  • [36] Atomic-Scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001)
    Gao, Teng
    Gao, Yabo
    Chang, Cuizu
    Chen, Yubin
    Liu, Mengxi
    Xie, Shubao
    He, Ke
    Ma, Xucun
    Zhang, Yanfeng
    Liu, Zhongfan
    ACS NANO, 2012, 6 (08) : 6562 - 6568
  • [37] Atomic deuteration of epitaxial many-layer graphene on 4H-SiC(0001)
    Mazza, Alessandro R.
    Miettinen, Anna
    Conrad, Matt
    Charlton, Timothy R.
    He, Xiaoqing
    Guha, Suchi
    Bian, Guang
    Lin, Jian
    Conrad, Edward H.
    Miceli, Paul F.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
  • [38] Structural and frictional properties of graphene films on SiC(0001) studied by atomic force microscopy
    Filleter, T.
    Bennewitz, R.
    PHYSICAL REVIEW B, 2010, 81 (15)
  • [39] Combined atomic force microscope and scanning tunneling microscope with high optical access achieving atomic resolution in ambient conditions
    Puerckhauer, Korbinian
    Maier, Simon
    Merkel, Anja
    Kirpal, Dominik
    Giessibl, Franz J.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2020, 91 (08):
  • [40] Multitip atomic force microscope lithography system for high throughput nanopatterning
    Oh, Young
    Choi, Chulmin
    Noh, Kunbae
    Villwock, Diana
    Jin, Sungho
    Kwon, Gwangmin
    Lee, Haiwon
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06):