Hybrid Structure of Silicon Nanocrystals and 2D WSe2 for Broadband Optoelectronic Synaptic Devices

被引:0
|
作者
Nia, Zhenyi [1 ,2 ]
Wang, Yue [1 ,2 ]
Liu, Lixiang [3 ]
Zhao, Shuangyi [1 ,2 ]
Xu, Yang [3 ]
Pi, Xiaodong [1 ,2 ]
Yang, Deren [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As one of the most important technologies in the coming "More than Moore" era, neuromorphic computing critically depends on the development of synaptic devices. Here we take advantage of the synergy of the strong broadband optical absorption of boron (B)-doped silicon nanocrystals (Si NCs) and the efficient charge transport of two-dimensional (2D) WSe2 to make synaptic devices based on the hybrid structure of Si NCs and 2D WSe2. The Si-NC/WSe2 synaptic devices can be optically stimulated in a broad spectral region from the ultraviolet (UV) to near-infrared (NIR), exhibiting important synaptic functionalities. The energy consumption of the Si-NC/WSe2 synaptic devices may be as low as similar to 75 fJ. This work has important implication for the development of synaptic devices by exploiting the abundant library of semiconductor NCs and 2D materials.
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页数:4
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