High Carrier Mobility of 3.8 cm2 V-1 s-1 in Polydiacetylene Thin Films Polymerized by Electron Beam Irradiation

被引：14

作者：

Kato, Takuji ^{[1
,2
]}

Yasumatsu, Mao ^{[1
]}

Origuchi, Chikako ^{[2
]}

Tsutsui, Kyoji ^{[2
]}

Ueda, Yasukiyo ^{[3
]}

Adachi, Chihaya ^{[1
]}

机构：

[1] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Fukuoka 8190395, Japan

[2] RICOH Co Ltd, R&D Ctr, Yokohama, Kanagawa 2240035, Japan

[3] Kobe Univ, Grad Sch Engn, Dept Chem Sci & Engn, Kobe, Hyogo 6578501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 09期

基金：

日本学术振兴会;

关键词：

FIELD-EFFECT MOBILITY; AIR-WATER-INTERFACE; SINGLE-CRYSTALS; DIACETYLENE; SURFACE; CONDUCTIVITY; MONOLAYER; TRANSPORT;

D O I：

10.1143/APEX.4.091601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm(2) V-1 s(-1), although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of mu(max) = 3.8 cm(2) V-1 s(-1). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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