New Ar-plasma cleaning process for reduction of Al/TiSi2 contact resistance

被引：1
|
作者：
Tsuno, M [1 ]
Yokoyama, S [1 ]
Shibahara, K [1 ]
机构：
[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima 7398527, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 11期
关键词：
TiSi2; contact resistivity; RF Ar plasma; defects; leakage current;
D O I：
10.1143/JJAP.37.5902
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
RF-Ar-plasma cleaning lowers Al/TiSi2 contact resistivity by 70% in comparison to conventional buffered-HF (BHF) cleaning. This improvement is due to effective removal of contaminants at the bottom of contact holes. Application of the Ar-plasma treatment to the Si surface before silicidation leads to a decrease in contact resistance down to 25 Omega for 0.3-mu m-diameter contact holes. The decrease is believed to be due to the fact that the effective barrier height between TiSi2 and n(+)-Si is reduced by defects induced by Ar cleaning.
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页码：5902 / 5905
页数：4
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