共 50 条
- [41] 980-nm External-Cavity Passively Mode-Locked Laser with Extremely Narrow RF Linewidth [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS XII, 2013, 8640
- [43] A high finesse external cavity with a LiB3O5 crystal for efficient frequency doubling of CWTi:sapphire laser [J]. 2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 440 - 441
- [45] External power-enhancement cavity versus intracavity frequency doubling of Ti:sapphire lasers using BIBO [J]. OPTICS EXPRESS, 2007, 15 (19): : 11913 - 11921
- [46] Self-injection locked CW single-frequency tunable Ti: sapphire laser [J]. OPTICS EXPRESS, 2017, 25 (18): : 21379 - 21387
- [47] Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm [J]. VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) II, 2012, 8242
- [48] A 440-μW 60-GHz Injection-Locked Frequency Divider in 65nm CMOS [J]. 2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 111 - 114
- [49] A W-Band Divide-by-1.5 Injection-Locked Frequency Divider in 90 nm CMOS Process [J]. 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,