Nanocrystalline titanium carbide thin films deposited by reactive magnetron sputtering

被引:2
|
作者
Musil, J
Hovorka, D
Misina, M
Bell, AJ
Studnicka, V
机构
[1] Univ W Bohemia, Dept Phys, Plzen 30614, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, Praha 18040 8, Czech Republic
关键词
D O I
10.1023/A:1022881307331
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigated the structure and composition of titanium carbide thin films deposited by the reactive magnetron sputter ion plating process as a function of deposition parameters. The films were sputtered onto unheated glass substrates by means of an unbalanced planar d.c. magnetron equipped with a titanium target using a mixture of argon and methane. The deposition parameters ranged from 0.05 Pa to 2 Pa for total working gas pressure p(T), from 10% to 60% (volume) for relative methane concentration in the working gas mixture, from 45 mm to 85 mm for the substrate-to-target distance d(s-t) and from -50V to -800V for the substrate bias Us. It was found that the crystallinity of the thin films strongly decreases with increasing p(T), d(s-t) and U-S. The experiments described show the conditions necessary to obtain sputter-deposited nanocrystalline titanium carbide films.
引用
收藏
页码:963 / 971
页数:9
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