Ballistic electron emission microscopy studies of Au/molecule/n-GaAs diodes

被引：34
|
作者：
Li, WJ
Kavanagh, KL [1 ]
Matzke, CM
Talin, AA
Léonard, F
Faleev, S
Hsu, JWP
机构：
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
[2] Sandia Natl Labs, Livermore, CA 94551 USA
[3] Sandia Natl Labs, Albuquerque, NM 87123 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 13期
关键词：
D O I：
10.1021/jp0501648
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present nanometer-scale resolution, ballistic electron emission microscopy (BEEM) studies of Au/octanedithiol/n-GaAs (001) diodes. The presence of the molecule dramatically increases the BEEM threshold voltage and displays an unusual transport signature as compared to reference Au/GaAs diodes. Furthermore, BEEM images indicate laterally inhomogeneous interfacial structure. We present calculations that address the role of the molecular layer at the interface. Our results indicate that spatially resolved measurements add new insight to studies using conventional spatial-averaging techniques.
引用
收藏
页码：6252 / 6256
页数：5
相关论文
共 50 条
  • [41] The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes
    Tunhuma, S. M.
    Auret, F. D.
    Legodi, M. J.
    Diale, M.
    PHYSICA B-CONDENSED MATTER, 2016, 480 : 201 - 205
  • [42] Effect of barrier inhomogeneities on heavily doped Au/n-GaAs Schottky diodes
    Sharma, R
    Padha, N
    Krupanidhi, SB
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 931 - 935
  • [43] A novel resonance in n-GaAs diodes
    Shiau, YH
    Néda, Z
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (11): : 6675 - 6676
  • [44] Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: Ballistic-electron-emission-microscopy measurement and Monte Carlo simulation
    Phys Rev B, 8 (4845):
  • [45] Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: Ballistic-electron-emission-microscopy measurement and Monte Carlo simulation
    Ke, ML
    Westwood, DI
    Matthai, CC
    Richardson, BE
    Williams, RH
    PHYSICAL REVIEW B, 1996, 53 (08): : 4845 - 4849
  • [46] Ballistic electron emission microscopy on biased GaAs-AlGaAs superlattices
    Heer, R
    Smoliner, J
    Strasser, G
    Gornik, E
    APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3138 - 3140
  • [47] Ballistic electron emission microscopy on buried GaAs-AlGaAs superlattices
    Smoliner, J.
    Heer, R.
    Strasser, G.
    Microelectronic Engineering, 1999, 47 (01): : 69 - 71
  • [48] Ballistic Electron Emission Microscopy on buried GaAs-AlGaAs superlattices
    Smoliner, J
    Heer, R
    Strasser, G
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 69 - 71
  • [49] BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDY OF PTSI-N-SI(100) SCHOTTKY DIODES
    NIEDERMANN, P
    QUATTROPANI, L
    SOLT, K
    KENT, AD
    FISCHER, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 580 - 585
  • [50] TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU/(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER
    TALIN, AA
    OHLBERG, DAA
    WILLIAMS, RS
    SULLIVAN, P
    KOUTSELAS, I
    WILLIAMS, B
    KAVANAGH, KL
    APPLIED PHYSICS LETTERS, 1993, 62 (23) : 2965 - 2966
12345