A fully integrated CMOS and high voltage compatible RF MEMS technology

被引：0
|
作者：
Guan, LP [1 ]
Sin, JKO [1 ]
Liu, HT [1 ]
Xiong, ZB [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept EEE, Kowloon, Hong Kong, Peoples R China
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a fully integrated CMOS and high voltage compatible RF MEMS (radio frequency microelectro-mechanical systems) technology is proposed and demonstrated for the first time. The high performance RF MEMS switch, high voltage MOSFET, and CMOS devices are all obtained using a simple process. The fabricated high voltage device has a breakdown voltage of over 35V. The MEMS capacitive switch fabricated on a high resistivity SOI substrate and with high-k dielectric (HfO2) exhibits a low insertion loss (0.14dB at 5GHz) and a good isolation (9.5dB at 5GHz). This technology demonstrates the feasibility of building fully integrated RF systems for wireless communication applications.
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收藏
页码：35 / 38
页数：4
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