A fully integrated CMOS and high voltage compatible RF MEMS technology

被引：0

作者：

Guan, LP ^{[1
]}

Sin, JKO ^{[1
]}

Liu, HT ^{[1
]}

Xiong, ZB ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept EEE, Kowloon, Hong Kong, Peoples R China

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a fully integrated CMOS and high voltage compatible RF MEMS (radio frequency microelectro-mechanical systems) technology is proposed and demonstrated for the first time. The high performance RF MEMS switch, high voltage MOSFET, and CMOS devices are all obtained using a simple process. The fabricated high voltage device has a breakdown voltage of over 35V. The MEMS capacitive switch fabricated on a high resistivity SOI substrate and with high-k dielectric (HfO2) exhibits a low insertion loss (0.14dB at 5GHz) and a good isolation (9.5dB at 5GHz). This technology demonstrates the feasibility of building fully integrated RF systems for wireless communication applications.

引用

页码：35 / 38

页数：4

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