Pressure dependence of the SDW transition in (TMTTF)2Br

被引：0

作者：

Ishikawa, A ^{[1
]}

Matsunaga, N

Nomura, K

Nakamura, T

Takahashi, T

Saito, G

机构：

[1] Hokkaido Univ, Div Phys, Sapporo, Hokkaido 0600810, Japan

[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

[3] Gakushuin Univ, Dept Phys, Toshima Ku, Tokyo 1718588, Japan

[4] Kyoto Univ, Dept Chem, Sakyo Ku, Kyoto 6068502, Japan

来源：

SYNTHETIC METALS | 2001年 / 120卷 / 1-3期

关键词：

transport measurements; metal-insulator phase transitions; organic conductors;

D O I：

10.1016/S0379-6779(00)00970-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the pressure dependence of the resistivity in (TMTTF)(2)Br, applying with pressure up to 1.2GPa. At ambient pressure the resistance shows the kink structure at 18K where the spin susceptibility starts to decrease, despite the AF transition occurs at 14K. With increasing pressure, the peak of the derivative of the resistance appears 4-8K above the AF transition. It's suggested to be the new phase transition above the AF transition. Above 0.5GPa, the pressure dependence of T-SDW is consistent with the prediction of the mean field theory.

引用

页码：905 / 906

页数：2

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