High Power LED Heat Dissipation Simulation Analysis via Heat Sink Fin Variation

被引：0

作者：

Retnasamy, V ^{[1
]}

Sauli, Z. ^{[1
]}

Vairavan, R. ^{[1
]}

Taniselass, S. ^{[1
]}

Mamat, H. ^{[2
]}

机构：

[1] Univ Malaysia Perlis, Sch Microelect Engn, Arau, Perlis, Malaysia

[2] MIMOS Berhad, Kuala Lumpur, Malaysia

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) | 2014年

关键词：

heat sink; fin number; GaN chip; high power LED; junction temperature; von Mises stress; Ansys; SYSTEM; SLUG;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, significance of heat sink fins numbers on the heat dissipation of single chip high power LED package was addressed. The investigation was carried out through simulation by utilizing Ansys version 11. In this work, the heat sink fin numbers were increased from 4 fins to 6 fins, 8 fins, 10 fins and 12 fins respectively. The heat dissipation were evaluated in terms of operating junction temperature, thermal resistance and von Mises stress of the LED chip. Results of the analysis showed that with the increment of heat sink fins, the surface area of the heat sink also increases which in turn reduces the junction temperature of the GaN chip.

引用

页码：130 / 133

页数：4

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