Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

被引：41
|
作者：
Oila, J
Kemppinen, A
Laakso, A
Saarinen, K
Egger, W
Liszkay, L
Sperr, P
Lu, H
Schaff, WJ
机构：
[1] Helsinki Univ Technol, Phys Lab, FIN-02015 Espoo, Finland
[2] Univ Bundeswehr Munchen, Inst Nukl Festkorperphys, D-85577 Neubiberg, Germany
[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期
关键词：
D O I：
10.1063/1.1651327
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al2O3 by molecular beam epitaxy. Their concentration decreases from similar to5x10(18) to below 10(16) cm(-3) with increasing layer thickness (120-800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers. (C) 2004 American Institute of Physics.
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收藏
页码：1486 / 1488
页数：3
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