Terahertz-wave detector on silicon carbide platform

被引：13
|
作者：
Ito, Hiroshi [1 ,2 ]
Shibata, Norihiko [3 ]
Nagatsuma, Tadao [3 ]
Ishibashi, Tadao [4 ]
机构：
[1] Kitasato Univ, Ctr Nat Sci, Minami Ku, 1-15-1 Kitasato, Sagamihara, Kanagawa 2520373, Japan
[2] Kitasato Univ, Grad Sch Med Sci, Minami Ku, 1-15-1 Kitasato, Sagamihara, Kanagawa 2520373, Japan
[3] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
[4] NTT Elect Techno Corp, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 02期
基金：
日本学术振兴会; 日本科学技术振兴机构;
关键词：
terahertz wave; detector; SiC platform; FMB diode; noise equivalent power; MANAGED BARRIER DIODE; HETERODYNE-DETECTION; ROOM-TEMPERATURE; BROAD-BAND; HIGH-SPEED; TECHNOLOGY;
D O I：
10.35848/1882-0786/ac4a13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, the fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide-input port. It exhibited a minimum noise equivalent power as low as 3 x 10(-19) W Hz(-1) at around 300 GHz for a local oscillator power of only 30 mu W.
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收藏
页数：4
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