Dynamics and microscopic origin of fast 1.5 μm emission in Er-doped SiO2 sensitized with Si nanocrystals

被引：9
|
作者：
Saeed, S. [1 ]
Timmerman, D. [1 ]
Gregorkiewicz, T. [1 ]
机构：
[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1098 XH Amsterdam, Netherlands
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 15期
关键词：
ENERGY-TRANSFER; SILICON NANOCRYSTALS; OPTICAL-PROPERTIES; CRYSTALLINE SI; LUMINESCENCE; EXCITATION; MECHANISMS; SIO2-FILMS; IONS;
D O I：
10.1103/PhysRevB.83.155323
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the origin of fast 1.5 mu m photoluminescence from Er-doped SiO2 sensitized with silicon nanocrystals, which appears and decays within the first microsecond after a short laser excitation pulse. Time-resolved and temperature-dependent measurements on the 1.5 mu m emission from Er-doped and Er-free samples reveal that the major part of this emission is Er related. A possible contribution from other photoluminescence bands, specifically of the defect-related band centered around 1.3 mu m, has also been considered. All the results obtained indicate the dominant contribution of Er3+ ions to the fast 1.5 mu m emission in the investigated materials. We propose two possible mechanisms behind the fast excitation and quenching of Er3+ 1.5 mu m emission, which are both facilitated by Er-related trap centers with ionization energy of E-A approximate to 60 meV.
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页数：5
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