Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

被引:47
|
作者
Xia, ZC [1 ]
Yuan, SL [1 ]
Feng, W [1 ]
Zhang, LJ [1 ]
Zhang, GH [1 ]
Tang, J [1 ]
Liu, L [1 ]
Liu, S [1 ]
Peng, G [1 ]
Niu, DW [1 ]
Chen, L [1 ]
Zheng, QH [1 ]
Fang, ZH [1 ]
Tang, CQ [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan 430074, Peoples R China
关键词
manganites; grain boundaiy; electrical transport;
D O I
10.1016/j.ssc.2003.08.024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The temperature dependence of the resistivity for composite samples of (1 - x)La0.67Ba0.33MnO3 + x YSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y2O3 + 92 mol% ZrO2). With increasing YSZ doping level, the range of 0-10%, the metal insulator transition temperature (T-P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:291 / 294
页数:4
相关论文
共 50 条
  • [31] Temperature dependence of magnetoresistance and nonlinear conductance of the bicrystal grain boundary in epitaxial La0.67Ba0.33MnO3 thin films
    Khare, N
    Moharil, UP
    Gupta, AK
    Raychaudhuri, AK
    Pai, SP
    Pinto, R
    APPLIED PHYSICS LETTERS, 2002, 81 (02) : 325 - 327
  • [32] Influence of Sintering Temperature on Microstructure and Electrical Properties of La0.67Ba0.33MnO3 Ceramic
    Ng, S. W.
    Lim, K. P.
    Halim, S. A.
    Chen, S. K.
    Wong, J. K.
    PROGRESS OF PHYSICS RESEARCH IN MALAYSIA, PERFIK2009, 2010, 1250 : 59 - 62
  • [33] Bending Modulated Ultralarge Magnetoresistance in Flexible La0.67Ba0.33MnO3 Thin Film Based Device
    Shen, Lvkang
    Zhang, Yang
    Liu, Tianyu
    Wang, He
    Ma, Chunrui
    Liu, Ming
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (43) : 48868 - 48875
  • [34] La0.67Ba0.33MnO3中Ag的掺杂效应
    原晓波
    刘宜华
    黄宝歆
    王成建
    梅良模
    功能材料, 2005, (01) : 32 - 34
  • [35] Hydrogen annealing effects on polycrystalline La0.67Ba0.33MnO3 compound
    Cui, YM
    Zhang, LW
    Wang, CC
    Shi, K
    Cao, BS
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 297 (01) : 21 - 25
  • [36] Measurements of conduction and magnetic noise of La0.67Ba0.33MnO3 manganite
    Singh, D. P.
    Khare, Neeraj
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2007, 20 (08): : 785 - 788
  • [37] Electric resistance and magnetoresistance of a two-layer epitaxial heterostructure (30 nm)La0.67Ca0.33MnO3/(30 nm)La0.67Ba0.33MnO3
    Yu. A. Boikov
    V. A. Danilov
    Technical Physics Letters, 2005, 31 : 1032 - 1035
  • [38] Electric resistance and magnetoresistance of a two-layer epitaxial heterostructure (30 nm)La0.67Ca0.33MnO3/(30 nm)La0.67Ba0.33MnO3
    Boikov, YA
    Danilov, VA
    TECHNICAL PHYSICS LETTERS, 2005, 31 (12) : 1032 - 1035
  • [39] Effect of laser irradiation on La0.67Ba0.33MnO3 thin films
    Chang Lei
    Jiang Yi-Jian
    ACTA PHYSICA SINICA, 2009, 58 (03) : 1997 - 2001
  • [40] Low-temperature specific heat of La0.67Ba0.33MnO3 and La0.8Ca0.2MnO3
    Hamilton, JJ
    Keatley, EL
    Ju, HL
    Raychaudhuri, AK
    Smolyaninova, VN
    Greene, RL
    PHYSICAL REVIEW B, 1996, 54 (21) : 14926 - 14929