Two-terminal current-in-plane giant magnetoresistance devices driven by the spin-orbit torque

被引:1
|
作者
Dong, Yiqing [1 ,2 ,3 ]
Xu, Teng [1 ,2 ,3 ]
Jiang, Wanjun [1 ,2 ,3 ]
机构
[1] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金; 国家重点研发计划;
关键词
LAYERED MAGNETIC-STRUCTURES; FE;
D O I
10.1063/5.0072336
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin valve effect driven by current-induced spin-orbit torques can help to realize electrically controllable and miniaturized two terminal spintronic devices. Here, we show that in a perpendicularly magnetized Fe 1 - x 1 Tb x 1/Pt/ Fe 1 - x 2 Tb x 2 spin-valve multilayer, spin currents from dual surfaces of the inserted Pt layer can be used to generate spin torques that can separately switch the adjacent ferrimagnetic Fe1-xTbx layers. In a two-terminal device, we further show that the accompanied parallel and anti-parallel magnetization configurations between the two Fe1-xTbx layers can lead to the observation of the current-in-plane giant magnetoresistance (CIP-GMR). Our results demonstrate that the current-induced spin-orbit torques can be implemented into two-terminal spin-torque devices, which can be electrically read out by the CIP-GMR. The present study could be important for designing miniaturized spintronic devices.
引用
收藏
页数:7
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