Plasma-free dry-chemical texturing process for high-efficiency multicrystalline silicon solar cells

被引:18
|
作者
Kafle, Bishal [1 ]
Freund, Timo [1 ]
Mannan, Abdul [1 ]
Clochard, Laurent [2 ]
Duffy, Edward [2 ]
Werner, Sabrina [1 ]
Saint-Cast, Pierre [1 ]
Hofmann, Marc [1 ]
Rentsch, Jochen [1 ]
Preu, Ralf [1 ]
机构
[1] Fraunhofer ISE, Heidenhofstr 2, D-79100 Freiburg, Germany
[2] Nines Photovolta, IT Tallaght, Dublin 24, Ireland
关键词
black silicon; atmospheric pressure; dry texturing; silicon nitride; surface passivation; emitter recombination; ATOMIC-LAYER DEPOSITION; BLACK SILICON; CONVERSION EFFICIENCY; CRYSTALLINE SILICON; PASSIVATION; J(0)-ANALYSIS; SURFACE;
D O I
10.1016/j.egypro.2016.07.113
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this paper, we study the influence of modifying the geometry of nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification process is developed that allows low surface recombination velocities (S-eff,S-min <= 10 cm/s) on nanotextured surfaces. By simultaneously improving the surface passivation and the emitter diffusion processes, we achieve an equivalent passivation level (V-OC,V-impl >= 670 mV) for nanotextured surfaces to that of reference textured surfaces after applying either PECVD or ALD based deposition techniques. (C) 2016 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:359 / 368
页数:10
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