Plasma-free dry-chemical texturing process for high-efficiency multicrystalline silicon solar cells

被引：18

作者：

Kafle, Bishal ^{[1
]}

Freund, Timo ^{[1
]}

Mannan, Abdul ^{[1
]}

Clochard, Laurent ^{[2
]}

Duffy, Edward ^{[2
]}

Werner, Sabrina ^{[1
]}

Saint-Cast, Pierre ^{[1
]}

Hofmann, Marc ^{[1
]}

Rentsch, Jochen ^{[1
]}

Preu, Ralf ^{[1
]}

机构：

[1] Fraunhofer ISE, Heidenhofstr 2, D-79100 Freiburg, Germany

[2] Nines Photovolta, IT Tallaght, Dublin 24, Ireland

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016) | 2016年 / 92卷

关键词：

black silicon; atmospheric pressure; dry texturing; silicon nitride; surface passivation; emitter recombination; ATOMIC-LAYER DEPOSITION; BLACK SILICON; CONVERSION EFFICIENCY; CRYSTALLINE SILICON; PASSIVATION; J(0)-ANALYSIS; SURFACE;

D O I：

10.1016/j.egypro.2016.07.113

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we study the influence of modifying the geometry of nanotexture on its electrical properties. Nanotexture is formed by an industrially feasible dry-chemical etching process performed entirely in atmospheric pressure conditions. A surface modification process is developed that allows low surface recombination velocities (S-eff,S-min <= 10 cm/s) on nanotextured surfaces. By simultaneously improving the surface passivation and the emitter diffusion processes, we achieve an equivalent passivation level (V-OC,V-impl >= 670 mV) for nanotextured surfaces to that of reference textured surfaces after applying either PECVD or ALD based deposition techniques. (C) 2016 The Authors. Published by Elsevier Ltd.

引用

页码：359 / 368

页数：10

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