High-pressure, high-temperature processing of low-nitrogen boron-doped diamond

被引：8
|
作者：
Chepurov, A. I. [1 ]
Yelisseyev, A. P. [1 ]
Zhimulev, E. I. [1 ]
Sonin, V. M. [1 ]
Fedorov, I. I. [1 ]
Chepurov, A. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Geol & Mineral, Siberian Div, Novosibirsk 630090, Russia
来源：
INORGANIC MATERIALS | 2008年 / 44卷 / 04期
关键词：
D O I：
10.1134/S0020168508040092
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied high- pressure, high- temperature processing ( 7.0 GPa, 2000 - 2100 degrees C) of low- nitrogen boron- doped synthetic diamonds grown in the Fe - Ni - C system ( 5.5 - 6.0 GPa, 1350 - 1450 degrees C) with boron and titanium additions. The results indicate that, during the growth of low- nitrogen boron- doped diamonds, there is a competition between different acceptors ( boron and nickel). The system of point defects and their distribution over the crystal are not influenced by the processing; the uniformity of coloration in natural diamonds is governed by the prevalence of octahedron growth sectors.
引用
收藏
页码：377 / 381
页数：5
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