High-pressure, high-temperature processing of low-nitrogen boron-doped diamond

被引：8

作者：

Chepurov, A. I. ^{[1
]}

Yelisseyev, A. P. ^{[1
]}

Zhimulev, E. I. ^{[1
]}

Sonin, V. M. ^{[1
]}

Fedorov, I. I. ^{[1
]}

Chepurov, A. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Geol & Mineral, Siberian Div, Novosibirsk 630090, Russia

来源：

INORGANIC MATERIALS | 2008年 / 44卷 / 04期

关键词：

D O I：

10.1134/S0020168508040092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied high- pressure, high- temperature processing ( 7.0 GPa, 2000 - 2100 degrees C) of low- nitrogen boron- doped synthetic diamonds grown in the Fe - Ni - C system ( 5.5 - 6.0 GPa, 1350 - 1450 degrees C) with boron and titanium additions. The results indicate that, during the growth of low- nitrogen boron- doped diamonds, there is a competition between different acceptors ( boron and nickel). The system of point defects and their distribution over the crystal are not influenced by the processing; the uniformity of coloration in natural diamonds is governed by the prevalence of octahedron growth sectors.

引用

页码：377 / 381

页数：5

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