Silicon semi 3D radiation detectors

被引：0
|
作者：
Eränen, S [1 ]
Virolainen, T [1 ]
Luusua, I [1 ]
Kalliopuska, J [1 ]
Kurvinen, K [1 ]
Eräluoto, M [1 ]
Härkönen, J [1 ]
Leinonen, K [1 ]
Palviainen, M [1 ]
Koski, M [1 ]
机构：
[1] VTT Informat Technol Microelect, FIN-02044 Espoo, Finland
来源：
2004 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-7 | 2004年
关键词：
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The paper describes the first results on the behavior of semi three dimensional (3D) silicon radiation detectors. As compared to the normal 3D detectors with the n- and p-type vertical doping profiles, the present structure employs the p-type profiles, only. The report covers the proposed new structure, fabrication sequence, the electrical characteristics like the capacitance, leakage current, breakdown voltage, x-ray response for the Am-source. These results are reported for the high resistivity Cz and FZ starting material. The measured electrical characteristics are compared with the 3D simulation results obtained with the ISE TCAD software. In addition, the 3D mixed mode transient simulations are employed in order to learn about the signal charge collection capabilities of the new structure.
引用
收藏
页码：1231 / 1235
页数：5
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