Spin memory effect in charged single telecom quantum dots

被引:3
|
作者
Podemski, Pawel [1 ]
Gawelczyk, Michal [2 ,3 ]
Wyborski, Pawel [1 ]
Salamon, Hanna [1 ]
Burakowski, Marek [1 ]
Musial, Anna [1 ]
Reithmaier, Johann Peter [4 ]
Benyoucef, Mohamed [4 ]
Sek, Grzegorz [1 ]
机构
[1] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Expt Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[2] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Theoret Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[3] Nicolaus Copernicus Univ, Fac Phys Astron & Informat, Inst Phys, PL-87100 Torun, Poland
[4] Univ Kassel, Inst Nanostruct Technol & Analyt INA, Ctr Interdisciplinary Nanostruct Sci & Technol CI, Heinrich Plett Str 40, D-34132 Kassel, Germany
关键词
RELAXATION; POLARIZATION; PHOTONS; STORAGE; TIME;
D O I
10.1364/OE.438708
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:34024 / 34034
页数:11
相关论文
共 50 条
  • [41] Spin inertia of resident and photoexcited carriers in singly charged quantum dots
    Zhukov, E. A.
    Kirstein, E.
    Smirnov, D. S.
    Yakovlev, D. R.
    Glazov, M. M.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    Greilich, A.
    PHYSICAL REVIEW B, 2018, 98 (12)
  • [42] Spin dynamics of neutraland charged excitons in InAs/GaAs quantum dots
    Sénès, M
    Liu, BL
    Marie, X
    Amand, T
    Gérard, JM
    OPTICAL PROPERTIES OF 2D SYSTEMS WITH INTERACTING ELECTRONS, 2003, 119 : 79 - 88
  • [43] ALL OPTICAL SPIN SWITCHING IN NEUTRAL OR CHARGED MAGNETIC QUANTUM DOTS
    Reiter, D. E.
    Hemmert, G.
    Kuhn, T.
    Axt, V. M.
    Machnikowski, P.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [44] The excited spin-triplet state of a charged exciton in quantum dots
    Molas, M. R.
    Nicolet, A. A. L.
    Pietka, B.
    Babinski, A.
    Potemski, M.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (36)
  • [45] Electron spin quantum beats in positively charged quantum dots: Nuclear field effects
    Lombez, L.
    Braun, P.-F.
    Marie, X.
    Renucci, P.
    Urbaszek, B.
    Amand, T.
    Krebs, O.
    Voisin, P.
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [46] Long-lived spin polarisation in the charged InP quantum dots
    Ignatiev, IV
    Gerlovin, IY
    Ikezawa, M
    Kalevich, VK
    Verbin, SY
    Masumoto, Y
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 361 - 364
  • [47] Spin relaxation of excitons in nonmagnetic quantum dots: Effect of spin coupling to magnetic semiconductor quantum dots
    Lee, S.
    Dobrowolska, M.
    Furdyna, J. K.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [48] Optical transition of the charged excitons in InAs single quantum dots
    Li Wen-Sheng
    Sun Bao-Quan
    ACTA PHYSICA SINICA, 2013, 62 (04)
  • [49] Laser spectroscopy of individual quantum dots charged with a single hole
    Gerardot, B. D.
    Barbour, R. J.
    Brunner, D.
    Dalgarno, P. A.
    Badolato, A.
    Stoltz, N.
    Petroff, P. M.
    Houel, J.
    Warburton, R. J.
    APPLIED PHYSICS LETTERS, 2011, 99 (24)
  • [50] Optical generation of spin coherence in single-charged (In,Ga)As/GaAs self-assembled quantum dots
    Greilich, A.
    Oulton, R.
    Zhukov, E. A.
    Yugova, I. A.
    Yakovlev, D. R.
    Bayer, M.
    Shabaev, A.
    Efros, Al L.
    Stavarache, V.
    Reuter, D.
    Wieck, A.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 35 (02): : 272 - 277