Spin memory effect in charged single telecom quantum dots

被引：3

作者：

Podemski, Pawel ^{[1
]}

Gawelczyk, Michal ^{[2
,3
]}

Wyborski, Pawel ^{[1
]}

Salamon, Hanna ^{[1
]}

Burakowski, Marek ^{[1
]}

Musial, Anna ^{[1
]}

Reithmaier, Johann Peter ^{[4
]}

Benyoucef, Mohamed ^{[4
]}

Sek, Grzegorz ^{[1
]}

机构：

[1] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Expt Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

[2] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Theoret Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

[3] Nicolaus Copernicus Univ, Fac Phys Astron & Informat, Inst Phys, PL-87100 Torun, Poland

[4] Univ Kassel, Inst Nanostruct Technol & Analyt INA, Ctr Interdisciplinary Nanostruct Sci & Technol CI, Heinrich Plett Str 40, D-34132 Kassel, Germany

来源：

OPTICS EXPRESS | 2021年 / 29卷 / 21期

关键词：

RELAXATION; POLARIZATION; PHOTONS; STORAGE; TIME;

D O I：

10.1364/OE.438708

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single InP-based quantum dots emitting in the third telecom window are probed quasi-resonantly in polarization-resolved microphotoluminescence experiments. For charged quantum dots we observe negative circular polarization being a fingerprint of the optical spin writing of the carriers within the quantum dots. The investigated quantum dots have a very dense ladder of excited states providing relatively easy quasi-resonant optical excitation, and together with telecom wavelengths emission they bring quantum gates and memories closer to compatibility with fiber-optic communication. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：34024 / 34034

页数：11

共 50 条

[1] Spin memory effect in charged single telecom quantum dots (vol 29, pg 34024, 2021)
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Gawelczyk, Michal
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Salamon, Hanna
Burakowski, Marek
Musial, Anna
Reithmaier, Johann Peter
Benyoucef, Mohamed
Sek, Grzegorz
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