DEPTH SELECTIVE ANALYSIS OF BURIED SEMICONDUCTOR LAYERS USING X-RAY GRAZING INCIDENCE DIFFRACTION.

被引：0
|
作者：
Pietsch, U. [1 ]
Rose, D. [1 ]
机构：
[1] Univ Potsdam, Inst Solid State Phys, Potsdam, Germany
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 1996年 / 52卷
关键词：
D O I：
10.1107/S0108767396080634
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
MS12.03.06
引用
收藏
页码：C472 / C472
页数：1
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