Capping-induced suppression of annealing effects on Ga1-xMnxAs epilayers

被引：43
|
作者：
Stone, MB
Ku, KC
Potashnik, SJ
Sheu, BL
Samarth, N
Schiffer, P
机构：
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 22期
关键词：
D O I：
10.1063/1.1629376
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the effects of capping ferromagnetic Ga1-xMnxAs epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of a capping layer only 10 monolayers thick completely suppresses the enhancement of the ferromagnetism associated with low temperature annealing. This result, which demonstrates that the surface of a Ga1-xMnxAs epilayer strongly affects the defect structure, has important implications for the incorporation of Ga1-xMnxAs into device heterostructures. (C) 2003 American Institute of Physics.
引用
收藏
页码：4568 / 4570
页数：3
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