Epitaxial growth of Cu2O and ZnO/Cu2O thin films on MgO by plasma-assisted molecular beam epitaxy

被引：33
|
作者：
Darvish, Davis S. [1 ]
Atwater, Harry A. [1 ]
机构：
[1] CALTECH, Thomas J Watson Lab Appl Phys, Pasadena, CA 91125 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 319卷 / 01期
关键词：
Molecular beam epitaxy; Oxides; Semiconducting materials; Heterojunction semiconductor device solar cell;
D O I：
10.1016/j.jcrysgro.2011.01.071
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the epitaxial growth of Cu2O (0 0 1) and m-plane (1 0 T 0) ZnO/Cu2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) via plasma-assisted molecular beam epitaxy. Cube on cube epitaxial growth of Cu2O thin films on both bulk MgO (0 0 1) and biaxially textured thin films of MgO (0 0 1) was observed and confirmed via X-ray diffraction and reflection high energy electron diffraction measurements. In addition, epitaxial m-plane ZnO growth via plasma-assisted MBE was conducted on both MgO substrates and Cu2O/MgO substrates. The ability to grow oriented, high-quality n-ZnO/p-Cu2O heterostructures enables improved thin film morphology and may have important implications for optoelectronic and photovoltaic devices. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：39 / 43
页数：5
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