We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N-2 and O-2) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-Vand I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O-2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O-2 atmosphere, improved considerably the electrical properties of the films. (c) 2005 Elsevier B.V. All rights reserved.
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Qingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
Qingdao Univ, Lab New Fiber Mat & Modem Text, Growing Base State Key Lab, Qingdao 266071, Peoples R ChinaQingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
Shan, F. K.
Liu, G. X.
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Qingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
Qingdao Univ, Lab New Fiber Mat & Modem Text, Growing Base State Key Lab, Qingdao 266071, Peoples R ChinaQingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
Liu, G. X.
Shin, B. C.
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Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South KoreaQingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
Shin, B. C.
Lee, W. J.
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Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South KoreaQingdao Univ, Coll Phys Sci, Growing Base State Key Lab, Qingdao 266071, Peoples R China
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Samsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South KoreaSamsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South Korea
Kim, Moojin
Jin, Guanghai
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Samsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South Korea
Chungnam Natl Univ, Dept Phys, Taejon 305764, South KoreaSamsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South Korea
Jin, Guanghai
Kim, Kyung-Bo
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Samsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South KoreaSamsung Mobile Display Co LTD, Yongin 446711, Gyeonggi Do, South Korea
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Wang, L.
Liu, Y. C.
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
NE Normal Univ, Minist Educ, Key Lab Appl Stat, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Liu, Y. C.
Xu, C. S.
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Xu, C. S.
Qiu, Y. Q.
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Qiu, Y. Q.
Zhao, L.
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhao, L.
Rong, X. M.
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China