Auroral potential structures and current-voltage relationship: Summary of recent results

被引:3
|
作者
Janhunen, P
Olsson, A
机构
[1] Finnish Meteorol Inst, Geophys Res Div, FIN-00101 Helsinki, Finland
[2] Swedish Inst Space Phys, Uppsala Div, S-75591 Uppsala, Sweden
关键词
D O I
10.1016/S1464-1917(00)00096-9
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
Discrete auroral arcs are caused by precipitating accelerated electrons, and there is a lot of observational evidence for the associated potential structure being U-shaped below about 15000 km altitude. However, according to our studies using Polar data at higher altitude, there is a lack of convergent electric field signatures at similar to 20000-35000 km and consequently we suggest that the U-shaped potential contours close below this altitude range. To explain this finding, an O-shaped potential model is proposed, together with a maintenance mechanism which involves parallel energisation of middle-energy electrons by waves in the 15000-30000 km altitude range. Test particle simulations show that the presence of waves brings this "cooperative" model in quantitative agreement with both Polar and low-altitude observations. We also discuss our statistical Freja satellite studies of the observational relationship between the peak energy (voltage) and the current density in inverted-V regions. The result is that the current and voltage are sometimes correlated in the evening sector events, but almost always anticorrelated in the morning sector. This result, which is very interesting in its own right, may also have some relationship to the potential structure question, (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:107 / 111
页数:5
相关论文
共 50 条
  • [21] Anisotropy of Current-Voltage Characteristics in PbSnTe:In Film Structures
    Epov, Vladimir S.
    Klimov, Alexander E.
    Shumsky, Vladimir N.
    EDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2009, : 120 - +
  • [22] CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF TUNNEL MOS STRUCTURES
    DUBEY, PK
    FILIKOV, VA
    SIMMONS, JG
    THIN SOLID FILMS, 1976, 33 (01) : 49 - 63
  • [23] SIMULATIONS OF THE CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR TUNNEL STRUCTURES
    DAVIES, RA
    GEC JOURNAL OF RESEARCH, 1987, 5 (02): : 65 - 75
  • [24] THEORY OF SUBLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STRUCTURES
    LEIDERMAN, AY
    KARAGEORGYALKALAEV, PM
    SOLID STATE COMMUNICATIONS, 1978, 27 (04) : 339 - 341
  • [25] Current-voltage characteristics of porous-silicon structures
    Diligenti, A.
    Nannini, A.
    Pennelli, G.
    Pieri, F.
    Nuovo Cimento Della Societa Italiana Di Fisica. D, Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics, 18 (10):
  • [26] MODELISATION OF CURRENT-VOLTAGE STATIC CHARACTERISTICS OF MOS STRUCTURES
    Boumedine, Fazia
    Oussalah, Slimane
    Belkaid, Mohammed Said
    2009 6TH INTERNATIONAL MULTI-CONFERENCE ON SYSTEMS, SIGNALS AND DEVICES, VOLS 1 AND 2, 2009, : 1002 - +
  • [27] INVESTIGATION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF SUPERCONDUCTING FILM STRUCTURES
    PARREIDT, R
    SCHADT, F
    KECK, K
    SCHULZE, HJ
    SOLID STATE COMMUNICATIONS, 1983, 45 (07) : 535 - 540
  • [28] Current-voltage characteristics of porous-silicon structures
    Diligenti, A
    Nannini, A
    Pennelli, G
    Pieri, F
    Pellegrini, V
    Fuso, F
    Allegrini, M
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1996, 18 (10): : 1197 - 1204
  • [29] THEORY OF SUBLINEAR CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR STRUCTURES
    LEIDERMAN, AY
    KARAGEORGYALKALAEV, PM
    SOLID STATE COMMUNICATIONS, 1978, 25 (10) : 781 - 783
  • [30] Nonlinear current-voltage relationship in the quantum Hall effect
    Boggild, P
    Hansen, EB
    PHYSICA SCRIPTA, 1997, T69 : 124 - 127