Dual-Band SiGe HBT Clapp VCOs with a Novel Band-Switching Technique of Controlling a Negative Resistance Bandwidth

被引：0

作者：

Itoh, Yasushi ^{[1
]}

Cao, Wei ^{[1
]}

机构：

[1] Shonan Inst Technol, Dept Elect & Elect Engn, Kanagawa 2518511, Japan

来源：

APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5 | 2009年

关键词：

microwaves oscillators; voltage controlled oscillators; Clapp VCO; SiGe HBT; multi-band; CMOS;

D O I：

10.1109/APMC.2009.5385442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dual-band SiGe HBT Clapp VCO for the next generation multi-band and multi-mode wireless applications is presented. It employs a novel band-switching technique of controlling a negative resistance bandwidth for a fixed dual-band resonator. The negative resistance bandwidth can be switched by controlling a supply bias voltage as well as a shunt inductor of the common-collector HBT. The implemented 0.35-mu m SiGe HBT Clapp VCO has achieved a dual-band performance from 0.666 to 0.674GHz for a V-CC of 4 V and from 1.521 to 1.536 GHz for a V-CC of 2 V. The phase noise at 100kHz offset is -120.2dBc/Hz at 0.67GHz and -112.5dBc/Hz at 1.53GHz. This is the first report on the multi-band SiGe HBT Clapp VCO with oscillation bandwidths switched by a supply bias voltage.

引用

页码：2300 / 2303

页数：4

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