Negative infrared photoconductivity in CdS1-xSex films

被引：1
|
作者：
Abdinov, AS [1 ]
Jafarov, MA [1 ]
Mamedov, HM [1 ]
Nasirov, EF [1 ]
机构：
[1] Baku State Univ, Baku 370148, Azerbaijan
来源：
17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 2003年 / 5126卷
关键词：
chemical deposition; films; negative infrared photoconductivity; photodetector;
D O I：
10.1117/12.517363
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The negative infrared photoconductivity (NPH) has been observed for the first time in CdS1-xSex films, in the wavelength region of 0.700 divided by 1.23 mum at values of stimulating light intensity Phi = 100 divided by 400 Lk. electrical field E = 0.5 divided by 130 V/cm and temperature T = 265 divided by 310 K. It is established. that basic laws of NPH explains on the basis of two-barrier model and in the considered conditions a charge carriers, overcome a barrier by tunneling. A films of CdS1-xSex can be used in IR engineering and negatronics.
引用
收藏
页码：386 / 390
页数：5
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