STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface

被引：1
|
作者：
Xu Mao-Jie [1 ]
Mayandi, Jeyanthinath [2 ]
Wang Xue-Sen [2 ]
Jia Jin-Feng [1 ]
Xue Qi-Kun [3 ]
Dou Xiao-Ming [1 ,4 ]
机构：
[1] Shanghai Jiao Tong Univ, Inst Opt Engn, Shanghai 200240, Peoples R China
[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[4] Shanghai Univ Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai 200093, Peoples R China
来源：
CHINESE PHYSICS B | 2010年 / 19卷 / 10期
关键词：
pit; facet; homoepitaxy; Si(001); SCANNING-TUNNELING-MICROSCOPY; VICINAL SI(001); HOMOEPITAXIAL GROWTH; SI(100) SURFACES; SILICON; INSTABILITIES; NUCLEATION; STEPS;
D O I：
10.1088/1674-1056/19/10/106102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D(B) steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface
    徐茂杰
    Jeyanthinath Mayandi
    王学森
    贾金锋
    薛其坤
    窦晓鸣
    [J]. Chinese Physics B, 2010, 19 (10) : 364 - 367
  • [2] STM STUDY OF EPITAXIAL-GROWTH OF GE ON SI(001)
    IWAWAKI, F
    TOMITORI, M
    NISHIKAWA, O
    [J]. SURFACE SCIENCE, 1991, 253 (1-3) : L411 - L416
  • [3] Nucleation along step edges during Si epitaxial growth on the Si(111)surface observed by STM
    Fujita, K
    Kusumi, Y
    Ichikawa, M
    [J]. SURFACE SCIENCE, 1997, 380 (01) : 66 - 74
  • [4] Characterization of epitaxial MgO growth on Si(001) surface
    Abukawa, Tadashi
    Sato, Shunsuke
    Matsuoka, Youta
    [J]. SURFACE SCIENCE, 2010, 604 (19-20) : 1614 - 1618
  • [5] STM observation of nickel silicides on Si(001)
    Yoshimura, M
    Ono, I
    Ueda, K
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S1043 - S1045
  • [6] STM observation of nickel silicides on Si(001)
    M. Yoshimura
    I. Ono
    K. Ueda
    [J]. Applied Physics A, 1998, 66 : 1043 - 1045
  • [7] Growth and evolution of epitaxial erbium disilicide nanowires on Si (001)
    Y. Chen
    D.A.A. Ohlberg
    G. Medeiros-Ribeiro
    Y.A. Chang
    R.S. Williams
    [J]. Applied Physics A, 2002, 75 : 353 - 361
  • [8] Growth and evolution of epitaxial erbium disilicide nanowires on Si (001)
    Chen, Y
    Ohlberg, DAA
    Medeiros-Ribeiro, G
    Chang, YA
    Williams, RS
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (03): : 353 - 361
  • [9] Epitaxial growth of gold on Si(001)
    Woelz, Martin
    Huang, Yue-Lin
    Seibt, Michael
    Erwin, Steven C.
    [J]. SURFACE SCIENCE, 2014, 624 : 15 - 20
  • [10] In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substrates
    Sanduijav, B.
    Matei, D.
    Chen, G.
    Schaeffler, F.
    Bauer, G.
    Springholz, G.
    [J]. THIN SOLID FILMS, 2008, 517 (01) : 293 - 296
12345