Radiation Effects in Advanced SOI Devices: New Insights into Total Ionizing Dose and Single-Event Effects

被引：0

作者：

Gaillardin, M. ^{[1
]}

Raine, M. ^{[1
]}

Paillet, P. ^{[1
]}

Martinez, M. ^{[1
]}

Marcandella, C. ^{[1
]}

Girard, S. ^{[2
]}

Duhamel, O. ^{[1
]}

Richard, N. ^{[1
]}

Andrieu, F. ^{[3
]}

Barraud, S. ^{[3
]}

Faynot, O. ^{[3
]}

机构：

[1] CEA, DIF, DAM, F-91297 Arpajon, France

[2] Univ St Etienne, Lab H Curien, CNRS, UMR 5516, F-42000 St Etienne, France

[3] CEA, LETI Minatec, F-38000 Grenoble, France

来源：

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年

关键词：

Total Ionizing Dose (TID); Single-Event Effects (SEE); Single-Event Transient (SET); Silicon-On-Insulator (SOI); Fully Depleted (FD); FinFET; multiple-gate FET; Ultra-Thin BOX and Body (UTBB); Extra-Thin SOI (ETSOI);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SOI technology has already demonstrated intrinsic resistance to transient radiation effects due to the dielectric isolation provided by the buried oxide. But this special feature raises questions about their Total Ionizing Dose (TID) sensitivity, particularly in Fully Depleted (FD) SOI and multiple-gate devices. This paper thus gives an overview of recent advances in radiation effects on innovative SOI devices. Both TID and Single-Event Effects (SEE) in Extra Thin SOI (ETSOI) and FinFET devices are reviewed as well as upcoming challenges to mitigate radiation effects in nanometer scale SOI technologies.

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页数：2

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